Abstract
Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.
Original language | English |
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Title of host publication | Optical and Electronic Cooling of Solids II |
Publisher | SPIE |
Pages | 1-7 |
ISBN (Electronic) | 9781510606845 |
ISBN (Print) | 9781510606838 |
DOIs | |
Publication status | Published - 2017 |
MoE publication type | A4 Conference publication |
Event | Optical and Electronic Cooling of Solids - San Francisco, United States Duration: 1 Feb 2017 → 2 Feb 2017 Conference number: 2 |
Publication series
Name | Proceedings of SPIE |
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Publisher | SPIE - International Society for Optical Engineering |
Volume | 10121 |
ISSN (Print) | 0277-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | Optical and Electronic Cooling of Solids |
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Country/Territory | United States |
City | San Francisco |
Period | 01/02/2017 → 02/02/2017 |
Keywords
- double diode structures
- electroluminescent cooling
- III-V semiconductors
- quantum efficiency
- radiative and non-radiative recombination