Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling

Jonna Tiira*, Ivan Radevici, Tuomas Haggren, Teemu Hakkarainen, Pyry Kivisaari, Jari Lyytikäinen, Arto Aho, Antti Tukiainen, Mircea Guina, Jani Oksanen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

3 Citations (Scopus)
43 Downloads (Pure)

Abstract

Optical cooling of semiconductors has recently been demonstrated both for optically pumped CdS nanobelts and for electrically injected GaInAsSb LEDs at very low powers. To enable cooling at larger power and to understand and overcome the main obstacles in optical cooling of conventional semiconductor structures, we study thermophotonic (TPX) heat transport in cavity coupled light emitters. Our structures consist of a double heterojunction (DHJ) LED with a GaAs active layer and a corresponding DHJ or a p-n-homojunction photodiode, enclosed within a single semiconductor cavity to eliminate the light extraction challenges. Our presently studied double diode structures (DDS) use GaInP barriers around the GaAs active layer instead of the AlGaAs barriers used in our previous structures. We characterize our updated double diode structures by four point probe IV-measurements and measure how the material modifications affect the recombination parameters and coupling quantum efficiencies in the structures. The coupling quantum efficiency of the new devices with InGaP barrier layers is found to be approximately 10 % larger than for the structures with AlGaAs barriers at the point of maximum efficiency.

Original languageEnglish
Title of host publicationOptical and Electronic Cooling of Solids II
Pages1-7
ISBN (Electronic)9781510606845
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication
EventOptical and Electronic Cooling of Solids - San Francisco, United States
Duration: 1 Feb 20172 Feb 2017
Conference number: 2

Publication series

Name Proceedings of SPIE
PublisherSPIE - International Society for Optical Engineering
Volume10121
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOptical and Electronic Cooling of Solids
CountryUnited States
CitySan Francisco
Period01/02/201702/02/2017

Keywords

  • double diode structures
  • electroluminescent cooling
  • III-V semiconductors
  • quantum efficiency
  • radiative and non-radiative recombination

Fingerprint

Dive into the research topics of 'Intracavity double diode structures with GaInP barrier layers for thermophotonic cooling'. Together they form a unique fingerprint.

Cite this