Abstract
The combinations of magnetic materials with traditional semiconductors are interesting possibilities for new magnetoresistive structures. In this work the interlayer magnetic coupling in Co-Si systems has been studied. The coupling has been calculated within the density-functional theory, and it has been observed to oscillate with a spatial period of two Si layers. The electronic structure analysis indicates the formation of quantum wells within the Si spacer.
| Original language | English |
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| Pages (from-to) | 16018-16022 |
| Journal | Physical Review B |
| Volume | 62 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2000 |
| MoE publication type | A1 Journal article-refereed |