Interference Effects in Photoreflectance of Epitaxial Layers Grown on Semi-insulating Substrates

H.K. Lipsanen, V.M. Airaksinen

    Research output: Contribution to journalArticleScientificpeer-review

    29 Citations (Scopus)
    53 Downloads (Pure)

    Abstract

    Interferences were observed in the photoreflectance spectra of homoepitaxial layers grown on semi‐insulating GaAs and InP substrates. The modulation mechanism responsible for the interference effect was studied from the frequency and temperature dependence of the interference amplitude and the effect of continuous wave illumination. The results are in agreement with the model that the modulation is due to electrons drifting to the interface from the surface. A simple model was used to fit the interference spectra to the Lorentzian wave forms from the substrate and the epitaxial layer.
    Original languageEnglish
    Pages (from-to)2863-2865
    Number of pages3
    JournalApplied Physics Letters
    Volume63
    Issue number21
    DOIs
    Publication statusPublished - 1993
    MoE publication typeA1 Journal article-refereed

    Keywords

    • photoreflectance
    • semiconductors

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