Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements

M. Karilahti, T. Tuomi, P.J. McNally

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)
    Original languageEnglish
    Pages (from-to)45-55
    JournalSemiconductor Science and Technology
    Issue number18
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Keywords

    • integrated circuits
    • silicon
    • synchrotron x-ray topography
    • yield

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