Integrated 2.4 GHz class-E CMOS power amplifier

V. Saari*, P. Juurakko, J. Ryynänen, K. Halonen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    15 Citations (Scopus)

    Abstract

    An integrated two-stage class-E power amplifier operating at the 2.4 GHz frequency range is described. The implemented power amplifier is capable of providing 21.3 dBm output power with power added efficiency of 40 % and gain of 14.3 dB at 2.4 GHz. The drain efficiency of the class-E power stage is 55 % at 21.3 dBm power. The power amplifier uses 3.3 V supply voltage and was fabricated with 0.18 μm CMOS technology. The linear gain is 23.8 dB and the chip area 0.43 mm2.

    Original languageEnglish
    Title of host publicationDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    EditorsA. Jerng
    Pages645-648
    Number of pages4
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    EventIEEE Radio Frequency Integrated Circuits Symposium - Long Beach, United States
    Duration: 12 Jun 200514 Jun 2005

    Conference

    ConferenceIEEE Radio Frequency Integrated Circuits Symposium
    Abbreviated titleRFIC
    CountryUnited States
    CityLong Beach
    Period12/06/200514/06/2005

    Keywords

    • Class-E
    • CMOS
    • Integrated circuits
    • Power amplifiers
    • Transmitter

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