In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

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In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs. / Reentila, Outi; Lankinen, A.; Mattila, M.; Saynatjoki, A.; Tuomi, T.O.; Lipsanen, H.; "O'Reilly", L.; McNally, P.J.

In: Journal of Materials Science: Materials in Electronics, Vol. 19, No. 2, 02.2008, p. 137-142.

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Reentila, Outi ; Lankinen, A. ; Mattila, M. ; Saynatjoki, A. ; Tuomi, T.O. ; Lipsanen, H. ; "O'Reilly", L. ; McNally, P.J. / In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs. In: Journal of Materials Science: Materials in Electronics. 2008 ; Vol. 19, No. 2. pp. 137-142.

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@article{95527cef60014ff8afde4be962d3d41b,
title = "In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs",
keywords = "dilute nitride, movpe, synchrotron topography, dilute nitride, movpe, synchrotron topography, dilute nitride, movpe, synchrotron topography",
author = "Outi Reentila and A. Lankinen and M. Mattila and A. Saynatjoki and T.O. Tuomi and H. Lipsanen and L. {"}O'Reilly{"} and P.J. McNally",
year = "2008",
month = "2",
doi = "10.1007/s10854-007-9306-5",
language = "English",
volume = "19",
pages = "137--142",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "2",

}

RIS - Download

TY - JOUR

T1 - In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

AU - Reentila, Outi

AU - Lankinen, A.

AU - Mattila, M.

AU - Saynatjoki, A.

AU - Tuomi, T.O.

AU - Lipsanen, H.

AU - "O'Reilly", L.

AU - McNally, P.J.

PY - 2008/2

Y1 - 2008/2

KW - dilute nitride

KW - movpe

KW - synchrotron topography

KW - dilute nitride

KW - movpe

KW - synchrotron topography

KW - dilute nitride

KW - movpe

KW - synchrotron topography

UR - http://dx.doi.org/10.1007/s10854-007-9306-5

U2 - 10.1007/s10854-007-9306-5

DO - 10.1007/s10854-007-9306-5

M3 - Article

VL - 19

SP - 137

EP - 142

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 2

ER -

ID: 3555374