In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

Research output: Contribution to journalArticle


  • Outi Reentila
  • A. Lankinen
  • M. Mattila
  • A. Saynatjoki
  • T.O. Tuomi
  • Harri Lipsanen

  • L. "O'Reilly"
  • P.J. McNally

Research units

  • Dublin City University


Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number2
Publication statusPublished - Feb 2008
MoE publication typeA1 Journal article-refereed

    Research areas

  • dilute nitride, movpe, synchrotron topography

ID: 3555374