In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

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In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres. / Broas, Mikael; Lemettinen, Jori; Sajavaara, Timo; Tilli, Markku; Vuorinen, Vesa; Suihkonen, Sami; Paulasto-Kröckel, Mervi.

In: Thin Solid Films, Vol. 682, 31.07.2019, p. 147-155.

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@article{52261dfa5bb0443ca796a1c49ba53834,
title = "In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres",
abstract = "Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.",
keywords = "Aluminum oxide, Atomic layer deposition, Barrier film, Crystallization, High-temperature annealing",
author = "Mikael Broas and Jori Lemettinen and Timo Sajavaara and Markku Tilli and Vesa Vuorinen and Sami Suihkonen and Mervi Paulasto-Kr{\"o}ckel",
note = "Tarkista embargo, kun artikkeli julkaistu.",
year = "2019",
month = "7",
day = "31",
doi = "10.1016/j.tsf.2019.03.010",
language = "English",
volume = "682",
pages = "147--155",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier Science",

}

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TY - JOUR

T1 - In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

AU - Broas, Mikael

AU - Lemettinen, Jori

AU - Sajavaara, Timo

AU - Tilli, Markku

AU - Vuorinen, Vesa

AU - Suihkonen, Sami

AU - Paulasto-Kröckel, Mervi

N1 - Tarkista embargo, kun artikkeli julkaistu.

PY - 2019/7/31

Y1 - 2019/7/31

N2 - Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.

AB - Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.

KW - Aluminum oxide

KW - Atomic layer deposition

KW - Barrier film

KW - Crystallization

KW - High-temperature annealing

UR - http://www.scopus.com/inward/record.url?scp=85065532680&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.03.010

DO - 10.1016/j.tsf.2019.03.010

M3 - Article

VL - 682

SP - 147

EP - 155

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

ID: 33975003