InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Vladislav Khayrudinov; Tomi Koskinen; Kacper Grodecki; Krzysztof Murawski; Małgorzata Kopytko; Lide Yao; Hua Jiang; Ilkka Juhani Tittonen; Harri Lipsanen; Tuomas Haggren

doi:10.1021/acsaelm.1c01175

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Vladislav Khayrudinov^*
, Tomi Koskinen
, Kacper Grodecki
, Krzysztof Murawski
, Małgorzata Kopytko
, Lide Yao
, Hua Jiang
, Ilkka Juhani Tittonen
, Harri Lipsanen
, Tuomas Haggren

^*Corresponding author for this work

Military University of Technology Warsaw

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

109 Downloads (Pure)

Abstract

We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

Original language	English
Pages (from-to)	539-545
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	4
Issue number	1
DOIs	https://doi.org/10.1021/acsaelm.1c01175
Publication status	Published - 25 Jan 2022
MoE publication type	A1 Journal article-refereed

Funding

V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlström Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlström Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Hällström for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center.

Keywords

bendable
flexible
InSb nanowires
MOVPE/MOCVD
photoluminescence
photoresistor

Access to Document

10.1021/acsaelm.1c01175Licence: CC BY

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device FabricationFinal published version, 6.43 MBLicence: CC BY

Cite this

@article{f12483570eff425ebdd44a6f98e6b49d,

title = "InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication",

abstract = "We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.",

keywords = "bendable, flexible, InSb nanowires, MOVPE/MOCVD, photoluminescence, photoresistor",

author = "Vladislav Khayrudinov and Tomi Koskinen and Kacper Grodecki and Krzysztof Murawski and Ma{\l}gorzata Kopytko and Lide Yao and Hua Jiang and Tittonen, \{Ilkka Juhani\} and Harri Lipsanen and Tuomas Haggren",

note = "Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstr{\"o}m Foundation, Elektroniikkainsin{\"o}{\"o}rien S{\"a}{\"a}ti{\"o}, S{\"a}hk{\"o}insin{\"o}{\"o}riliiton S{\"a}{\"a}ti{\"o}, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edist{\"a}miss{\"a}{\"a}ti{\"o}), Waldemar von Frenckell{\textquoteright}s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstr{\"o}m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstr{\"o}m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi H{\"a}llstr{\"o}m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: {\textcopyright} 2022 The Authors. Published by American Chemical Society",

year = "2022",

month = jan,

day = "25",

doi = "10.1021/acsaelm.1c01175",

language = "English",

volume = "4",

pages = "539--545",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

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T1 - InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

AU - Khayrudinov, Vladislav

AU - Koskinen, Tomi

AU - Grodecki, Kacper

AU - Murawski, Krzysztof

AU - Kopytko, Małgorzata

AU - Yao, Lide

AU - Jiang, Hua

AU - Tittonen, Ilkka Juhani

AU - Lipsanen, Harri

AU - Haggren, Tuomas

N1 - Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlström Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlström Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Hällström for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society

PY - 2022/1/25

Y1 - 2022/1/25

N2 - We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

AB - We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

KW - bendable

KW - flexible

KW - InSb nanowires

KW - MOVPE/MOCVD

KW - photoluminescence

KW - photoresistor

UR - https://www.scopus.com/pages/publications/85123925250

U2 - 10.1021/acsaelm.1c01175

DO - 10.1021/acsaelm.1c01175

M3 - Article

AN - SCOPUS:85123925250

SN - 2637-6113

VL - 4

SP - 539

EP - 545

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 1

ER -

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Abstract

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Keywords

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InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Projects

PREIN: Photonics Research and Innovation

Equipment

OtaNano

OtaNano - Nanofab

OtaNano - Nanomicroscopy Center

Cite this