Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation

Liam Gillan*, Shujie Li, Jouko Lahtinen, Chih-Hung Chang, Ari Alastalo, Jaakko Leppaniemi

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2-xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (mu(sat)) of approximate to 1 cm(2) V-1 s(-1) at a low 3 V operating voltage. When the dielectric material is annealed at 350 degrees C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 degrees C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.

Original languageEnglish
Article number2100728
Number of pages10
JournalAdvanced Materials Interfaces
DOIs
Publication statusE-pub ahead of print - 26 May 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • high&#8208
  • &#954
  • oxide dielectrics
  • inkjet printing
  • printed electronics
  • solution&#8208
  • processed oxides
  • thin&#8208
  • film transistors
  • IN2O3 SEMICONDUCTOR LAYERS
  • HIGH-PERFORMANCE
  • GATE DIELECTRICS
  • LOW-TEMPERATURE

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