Inhomogeneous Barrier Height Analysis of (Ni/Au)InAlGaN/GaN Schottky Barrier Diode

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Chonbuk National University

Details

Original languageEnglish
Article number030201
Pages (from-to)1-3
Number of pages3
JournalJapanese Journal of Applied Physics
Volume50
Issue number3
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

ID: 951195