InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates
Research output: Contribution to journal › Article › Scientific › peer-review
Researchers
Research units
- Optogan Oy
Details
Original language | English |
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Pages (from-to) | 3152-3156 |
Number of pages | 5 |
Journal | CrystEngComm |
Volume | 12 |
Issue number | 10 |
Publication status | Published - 2010 |
MoE publication type | A1 Journal article-refereed |
ID: 748361