InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Optogan Oy

Details

Original languageEnglish
Pages (from-to)3152-3156
Number of pages5
JournalCrystEngComm
Volume12
Issue number10
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

ID: 748361