Infrared absorption of hydrogen-related defects in ammonothermal GaN

Sami Suihkonen*, Siddha Pimputkar, James S. Speck, Shuji Nakamura

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    31 Citations (Scopus)
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    Abstract

    Polarization controlled Fourier transform infrared (FTIR) absorption measurements were performed on a high quality m-plane ammonothermal GaN crystal grown using basic chemistry. The polarization dependence of characteristic absorption peaks of hydrogen-related defects at 3000-3500 cm(-1) was used to identify and determine the bond orientation of hydrogenated defect complexes in the GaN lattice. Majority of hydrogen was found to be bonded in gallium vacancy complexes decorated with one to three hydrogen atoms (V-Ga-H-1,H-2,H-3) but also hydrogenated oxygen defect complexes, hydrogen in bond-center sites, and lattice direction independent absorption were observed. Absorption peak intensity was used to determine a total hydrogenated V-Ga density of approximately 4 x 10(18) cm(-3), with main contribution from V-Ga-H-1,H-2. Also, a significant concentration of electrically passive V-Ga-H-3 was detected. The high density of hydrogenated defects is expected to have a strong effect on the structural, optical, and electrical properties of ammonothermal GaN crystals. Published by AIP Publishing.

    Original languageEnglish
    Article number202105
    Number of pages4
    JournalApplied Physics Letters
    Volume108
    Issue number20
    DOIs
    Publication statusPublished - 16 May 2016
    MoE publication typeA1 Journal article-refereed

    Keywords

    • GALLIUM-NITRIDE
    • CRYSTALS
    • COMPLEXES
    • GROWTH

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