Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

E. A. Menkovich, S. A. Tarasov, A. V. Solomonov, S. Suihnonen, O. Svensk, L. Riuttanen, H. Nykanen

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    Abstract

    The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.

    Original languageEnglish
    Article number012035
    JournalJournal of Physics: Conference Series
    Volume572
    Issue number1
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

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