Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

E. A. Menkovich; S. A. Tarasov; A. V. Solomonov; S. Suihnonen; O. Svensk; L. Riuttanen; H. Nykanen

doi:10.1088/1742-6596/572/1/012035

Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

E. A. Menkovich, S. A. Tarasov, A. V. Solomonov, S. Suihnonen, O. Svensk, L. Riuttanen, H. Nykanen

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Abstract

The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.

Original language	English
Article number	012035
Journal	Journal of Physics: Conference Series
Volume	572
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/572/1/012035
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

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title = "Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides",

abstract = "The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.",

author = "Menkovich, {E. A.} and Tarasov, {S. A.} and Solomonov, {A. V.} and S. Suihnonen and O. Svensk and L. Riuttanen and H. Nykanen",

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T1 - Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

AU - Menkovich, E. A.

AU - Tarasov, S. A.

AU - Solomonov, A. V.

AU - Suihnonen, S.

AU - Svensk, O.

AU - Riuttanen, L.

AU - Nykanen, H.

PY - 2014

Y1 - 2014

N2 - The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.

AB - The effect of addition of superlattice (SL) and the structure of the upper barrier layer on the luminescence processes occurring in light-emitting nanoheterostructures was studied. It was shown that the optimum is using of structures with two SL: InGaN / InGaN structure in the lower part and the AlGaN / GaN for the top p-layer. It is shown that the using of the SL InGaN / InGaN in the vicinity of the active region optimally compensate the elastic stresses and the piezoelectric field at the hetero boundaries. Such compensation of elastic stresses reduces the formation of dislocations in these structures, which increases the radiation intensity.

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M3 - Article

AN - SCOPUS:84919429955

SN - 1742-6588

VL - 572

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

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ER -

Influence of the addition superlattices on the luminescence processes in nano-heterostructures based on nitrides

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