Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films

Jonatan Slotte; Filip Tuomisto; K. Saarinen; C.G. Moe; Stacia Keller; S.P. DenBaars

doi:10.1063/1.2721132

Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films

Jonatan Slotte, Filip Tuomisto, K. Saarinen, C.G. Moe, Stacia Keller, S.P. DenBaars

Department of Applied Physics

University of California, Santa Barbara

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.

Original language	English
Article number	151908
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	15
DOIs	https://doi.org/10.1063/1.2721132
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Keywords

AlGaN
optical properties
photoluminescence
positron annihilation
vacancies

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10.1063/1.2721132

1%2E2721132Final published version, 255 KB

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title = "Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films",

abstract = "The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.",

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AU - Slotte, Jonatan

AU - Tuomisto, Filip

AU - Saarinen, K.

AU - Moe, C.G.

AU - Keller, Stacia

AU - DenBaars, S.P.

PY - 2007

Y1 - 2007

N2 - The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.

AB - The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.

KW - AlGaN

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KW - photoluminescence

KW - positron annihilation

KW - vacancies

KW - AlGaN

KW - optical properties

KW - photoluminescence

KW - positron annihilation

KW - vacancies

KW - AlGaN

KW - optical properties

KW - photoluminescence

KW - positron annihilation

KW - vacancies

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DO - 10.1063/1.2721132

M3 - Article

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Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films

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Keywords

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