TY - JOUR
T1 - Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition
AU - Prabakaran, K.
AU - Jayasakthi, M.
AU - Surender, S.
AU - Pradeep, S.
AU - Sanjay, S.
AU - Ramesh, Raju
AU - Balaji, M.
AU - Baskar, K.
PY - 2019/3/1
Y1 - 2019/3/1
N2 - InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using high-resolution X-ray diffraction. The indium composition and InGaN thickness were determined to be 10–15% and 5–10 nm, respectively. Transmission electron microscopy image revealed the interfacial characteristics of the InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN was determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5 nm)/GaN structures.
AB - InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using high-resolution X-ray diffraction. The indium composition and InGaN thickness were determined to be 10–15% and 5–10 nm, respectively. Transmission electron microscopy image revealed the interfacial characteristics of the InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN was determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5 nm)/GaN structures.
UR - http://www.scopus.com/inward/record.url?scp=85062467153&partnerID=8YFLogxK
U2 - 10.1007/s00339-019-2503-2
DO - 10.1007/s00339-019-2503-2
M3 - Article
SN - 1432-0630
VL - 125
JO - APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING
JF - APPLIED PHYSICS A-MATERIALS SCIENCE AND PROCESSING
IS - 3
M1 - 206
ER -