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Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

  • J. Oila
  • , V. Ranki
  • , J. Kivioja
  • , K. Saarinen
  • , P. Hautojärvi
  • , J. Likonen
  • , J.M. Baranowski
  • , K. Pakula
  • , M. Leszczynski
  • , I. Grzegory

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalPhysical Review B
Volume63
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • Ga vacancy
  • GaN
  • positron annihilation

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