Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers

J. Oila, V. Ranki, J. Kivioja, K. Saarinen, P. Hautojärvi, J. Likonen, J.M. Baranowski, K. Pakula, M. Leszczynski, I. Grzegory

Research output: Contribution to journalArticleScientificpeer-review

Original languageEnglish
JournalPhysical Review B
Volume63
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed

Keywords

  • Ga vacancy
  • GaN
  • positron annihilation

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