Influence of dislocations in multilayer graphene stacks : A phase field crystal study

K. R. Elder, Zhi Feng Huang, T. Ala-Nissila

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Abstract

In this study, the influence of 5|7 dislocations in multilayer graphene stacks (up to six layers) is examined. The study is conducted using a recently developed phase-field crystal (PFC) model for multilayer systems incorporating out-of-plane deformations and parameterized to match to density functional theory calculations for graphene bilayers and other systems. The specific configuration considered consists of one monolayer containing four 5|7 dislocations (i.e., two dislocation dipoles) sandwiched between perfect graphene layers. This study reveals how the strain field from the dislocations in the defected layer leads to out-of-plane deformations, which in turn cause deformations of neighboring layers. Quantitative predictions are made for the defect-free energy of the multilayer stacks as compared to a defect-free system, which is shown to increase with the number of layers and system size. Furthermore, it is predicted that system defect energy saturates by roughly ten sheets in the stack, indicating the range of defect influence across the multilayer. Variations in stress field distribution and layer height profiles in different layers of the stack are also quantitatively identified.

Original languageEnglish
Article number104003
Pages (from-to)1-11
Number of pages11
JournalPhysical Review Materials
Volume8
Issue number10
DOIs
Publication statusPublished - Oct 2024
MoE publication typeA1 Journal article-refereed

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  • Finnish Centre of Excellence in Quantum Technology

    Alipour, S. (Project Member), Ala-Nissilä, T. (Principal investigator), Fan, Z. (Project Member), Tuorila, J. (Project Member) & Hirvonen, P. (Project Member)

    01/01/201831/12/2020

    Project: Academy of Finland: Other research funding

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