Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

Mikko Ruoho, Ville Pale, Mikhail Erdmanis, Ilkka Tittonen

Research output: Contribution to journalArticleScientificpeer-review

23 Citations (Scopus)

Abstract

We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.
Original languageEnglish
JournalApplied Physics Letters
Volume103
Issue number20
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Keywords

  • atomic layer deposition
  • carrier mobility
  • charge carriers
  • doping
  • II -VI semiconductors
  • lectrical resistivity
  • thermoelectric effects
  • thin film growth
  • thin films
  • zinc oxide films

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