Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation

Aleksei V. Emelianov*, Nikita P. Nekrasov, Maksim V. Moskotin, Georgy E. Fedorov, Nerea Otero, Pablo M. Romero, Vladimir K. Nevolin, Boris I. Afinogenov, Albert G. Nasibulin, Ivan I. Bobrinetskiy

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review


The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.

Original languageEnglish
JournalAdvanced Electronic Materials
Publication statusE-pub ahead of print - 2021
MoE publication typeA1 Journal article-refereed


  • carbon nanotubes
  • femtosecond lasers
  • photodetectors
  • photovoltaics
  • two-photon absorption

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