TY - JOUR
T1 - Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two-Photon Oxidation
AU - Emelianov, Aleksei V.
AU - Nekrasov, Nikita P.
AU - Moskotin, Maksim V.
AU - Fedorov, Georgy E.
AU - Otero, Nerea
AU - Romero, Pablo M.
AU - Nevolin, Vladimir K.
AU - Afinogenov, Boris I.
AU - Nasibulin, Albert G.
AU - Bobrinetskiy, Ivan I.
PY - 2021/3
Y1 - 2021/3
N2 - The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
AB - The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.
KW - carbon nanotubes
KW - femtosecond lasers
KW - photodetectors
KW - photovoltaics
KW - two-photon absorption
UR - http://www.scopus.com/inward/record.url?scp=85099758202&partnerID=8YFLogxK
U2 - 10.1002/aelm.202000872
DO - 10.1002/aelm.202000872
M3 - Article
AN - SCOPUS:85099758202
VL - 7
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 3
M1 - 2000872
ER -