TY - JOUR
T1 - Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps
AU - De Guzman, Joyce Ann T.
AU - Markevich, Vladimir P.
AU - Hawkins, Ian D.
AU - Ayedh, Hussein M.
AU - Coutinho, José
AU - Binns, Jeff
AU - Falster, Robert
AU - Abrosimov, Nikolay V.
AU - Crowe, Iain F.
AU - Halsall, Matthew P.
AU - Peaker, Anthony R.
N1 - Funding Information:
The authors would like to thank EPSRC (UK) for funding this work via grant EP/TO25131/1. J.A.T.D.G. would like to thank the Government of the Philippines through the Department of Science and Technology (DOST) for her Ph.D. funding. J.C. is thankful for the support of the i3N projects, Refs. UIDB/50025/2020 and UIDP/50025/2020, financed by the Fundação para a Ciência e a Tecnologia in Portugal.
Publisher Copyright:
© 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH
PY - 2021/12
Y1 - 2021/12
N2 - Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.
AB - Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.
KW - indium-doped silicon
KW - light-induced degradation
KW - oxygen recombination enhanced reactions
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=85110967328&partnerID=8YFLogxK
U2 - 10.1002/pssa.202100108
DO - 10.1002/pssa.202100108
M3 - Article
AN - SCOPUS:85110967328
SN - 1862-6300
VL - 218
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 23
M1 - 2100108
ER -