Indentation Load Relaxation Studies of Thin Film-Substrate Systems

Donald Stone, W. LaFontaine, S. Ruoff, Simo-Pekka Hannula, B. Yost, Che Yu Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Abstract

Results from indentation load relaxation (ILR) tests on thin film-substrate systems are reported. In the case of a 1 pum aluminum film on silicon, the data can be interpreted as reflecting both the properties of the film and the interface between film and substrate. Data from a 37μm TiN film on 304 SS are believed to reflect the combined behavior of the film and substrate.
Original languageEnglish
Title of host publicationMRS Proceedings. Symposium G – Electronic Packaging Materials
Pages127-131
Number of pages5
Volume72
DOIs
Publication statusPublished - 1986
MoE publication typeA4 Article in a conference publication
EventMaterials Research Society Spring Meeting - San Francisco, United States
Duration: 1 Jan 19861 Jan 1986

Publication series

NameMRS Proceedings
Volume72
ISSN (Print)1946-4274

Seminar

SeminarMaterials Research Society Spring Meeting
Abbreviated titleMRS
CountryUnited States
CitySan Francisco
Period01/01/198601/01/1986

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