Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

Girish C. Tewari; T. S. Tripathi; P. Kumar; A.K. Rastogi; S. K. Pasha; Govind Gupta

doi:10.1007/s11664-011-1789-4

Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

Girish C. Tewari^*, T. S. Tripathi, P. Kumar, A.K. Rastogi, S. K. Pasha, Govind Gupta

^*Corresponding author for this work

Not published at Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS ₂ is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

Original language	English
Pages (from-to)	2368-2373
Number of pages	6
Journal	Journal of Electronic Materials
Volume	40
Issue number	12
DOIs	https://doi.org/10.1007/s11664-011-1789-4
Publication status	Published - 1 Dec 2011
MoE publication type	A1 Journal article-refereed

Keywords

Thermoelectric materials
transition-metal compounds
electrical and thermal conduction in crystalline metals and alloys
magnetic polarons
PHYSICAL-PROPERTIES
FIGURE
MERIT
POWER

Access to Document

10.1007/s11664-011-1789-4

Link to publication in Scopus

Cite this

@article{deeb9e28c0fd40248323013eaa742f85,

title = "Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2",

abstract = "The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.",

keywords = "Thermoelectric materials, transition-metal compounds, electrical and thermal conduction in crystalline metals and alloys, magnetic polarons, PHYSICAL-PROPERTIES, FIGURE, MERIT, POWER",

author = "Tewari, {Girish C.} and Tripathi, {T. S.} and P. Kumar and A.K. Rastogi and Pasha, {S. K.} and Govind Gupta",

year = "2011",

month = dec,

day = "1",

doi = "10.1007/s11664-011-1789-4",

language = "English",

volume = "40",

pages = "2368--2373",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "12",

}

TY - JOUR

T1 - Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

AU - Tewari, Girish C.

AU - Tripathi, T. S.

AU - Kumar, P.

AU - Rastogi, A.K.

AU - Pasha, S. K.

AU - Gupta, Govind

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

AB - The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (σ) due to self-doping of the charge carriers and reduces thermal conductivity (κ) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 μV/K and 450 μV/K due to electronic doping in different samples.

KW - Thermoelectric materials

KW - transition-metal compounds

KW - electrical and thermal conduction in crystalline metals and alloys

KW - magnetic polarons

KW - PHYSICAL-PROPERTIES

KW - FIGURE

KW - MERIT

KW - POWER

UR - http://www.scopus.com/inward/record.url?scp=82955163204&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1789-4

DO - 10.1007/s11664-011-1789-4

M3 - Article

VL - 40

SP - 2368

EP - 2373

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -