InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

Research output: Contribution to journalArticle

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  • University of Copenhagen

Details

Original languageEnglish
Article number054017
Pages (from-to)1-7
JournalPhysical Review Applied
Volume6
Publication statusPublished - 28 Nov 2016
MoE publication typeA1 Journal article-refereed

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ID: 9615766