InAs-Nanowire-based Broadband Ultrafast Optical Switch

Junting Liu, Vladislav Khayrudinov, He Yang, Yue Sun, Boris Matveev, Maxim Remennyi, Kejian Yang, Tuomas Haggren, Harri Lipsanen, Fengqiu Wang, Baitao Zhang, Jingliang He

Research output: Contribution to journalArticleScientificpeer-review


Due to their tunable optical properties with various shapes, sizes and compositions, nanowires (NWs) have been regarded as a class of semiconductor nanostructures with great potential for photodetectors, light-emitting diodes, gas sensors, microcavity lasers, optical modulators and converters. Indium arsenide (InAs), an attractive III-V semiconductor NW with the advantages of narrow bandgap and large electron mobility, has attracted considerable interest in infrared optoelectronic and photonic devices. Here, we studied the ultrafast carrier dynamics and nonlinear optical responses of InAs NWs ranging from 1.0 to 2.8 µm, and demonstrated the InAs-NW-based ultrafast broadband optical switch for passively Q-switching in all-solid-state laser systems. Furthermore, we achieved ultrafast optical modulation for laser mode-locking at 1.0 μm, paving the way for their applications in the field of ultrafast optics. These exotic optical properties indicate that InAs NWs have significant potential for various optoelectronic and photonic devices, especially in the mid-infrared wavelength range.
Original languageEnglish
Pages (from-to)4429-4436
JournalJournal of Physical Chemistry Letters
Issue number15
Publication statusPublished - 18 Jul 2019
MoE publication typeA1 Journal article-refereed


  • nanowires
  • Nanowire

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    PREIN: Photonics Research and Innovation

    Mäkelä, K.


    Project: Academy of Finland: Other research funding



    Anna Rissanen (Manager)

    Aalto University

    Facility/equipment: Facility

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