In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

Jonatan Slotte; Simo Kilpeläinen; Natalie Segercrantz; Kenichiro Mizohata; Jyrki Räisänen; Filip Tuomisto

doi:10.1002/pssa.202000232

In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

Jonatan Slotte^*, Simo Kilpeläinen, Natalie Segercrantz, Kenichiro Mizohata, Jyrki Räisänen, Filip Tuomisto

^*Corresponding author for this work

University of Helsinki

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Abstract

A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.

Original language	English
Article number	2000232
Number of pages	6
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	218
Issue number	1
Early online date	2020
DOIs	https://doi.org/10.1002/pssa.202000232
Publication status	Published - Jan 2021
MoE publication type	A1 Journal article-refereed

Keywords

defects
irradiation
positron annihilation spectroscopy
vacancies

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In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities. / Slotte, Jonatan ; Kilpeläinen, Simo; Segercrantz, Natalie et al.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 218, No. 1, 2000232, 01.2021.

Research output: Contribution to journal › Article › Scientific › peer-review

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In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

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