In Situ Positron Annihilation Spectroscopy Analysis on Low-Temperature Irradiated Semiconductors, Challenges and Possibilities

Jonatan Slotte*, Simo Kilpeläinen, Natalie Segercrantz, Kenichiro Mizohata, Jyrki Räisänen, Filip Tuomisto

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)
111 Downloads (Pure)

Abstract

A unique experimental setup at the Accelerator Laboratory of the University of Helsinki enables in situ positron annihilation spectroscopy (PAS) analysis on ion irradiated samples. In addition, the system enables temperature control (10–300 K) of the sample both during irradiation and during subsequent positron annihilation measurements. Using such a system for defect identification and annealing studies comes with a plethora of possibilities for elaborate studies. However, the system also poses some restrictions and challenges to these possibilities, both related to irradiation and to the PAS analysis. This review tries to address these issues.

Original languageEnglish
Article number2000232
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume218
Issue number1
Early online date2020
DOIs
Publication statusPublished - Jan 2021
MoE publication typeA1 Journal article-refereed

Keywords

  • defects
  • irradiation
  • positron annihilation spectroscopy
  • vacancies

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