In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

Research output: Working paperProfessional

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Details

Original languageEnglish
Place of PublicationBerlin, Germany
Pages1111-1114
Publication statusPublished - 1996
MoE publication typeD4 Published development or research report or study

Publication series

NameThe Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996

    Research areas

  • optoelectronics, semiconductors

ID: 5243665