In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

Research output: Working paper › Professional

Original language	English
Place of Publication	Berlin, Germany
Pages	1111-1114
Publication status	Published - 1996
MoE publication type	D4 Published development or research report or study

Name	The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996

Keywords

@techreport{5e1ba3077b234fdaa1dc3f7d321d7fda,

title = "In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells",

keywords = "optoelectronics, semiconductors, optoelectronics, semiconductors, optoelectronics, semiconductors",

author = "H. Lipsanen and M. Sopanen and M. Taskinen and J. Tulkki and J. Ahopelto",

year = "1996",

language = "English",

series = "The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996",

pages = "1111--1114",

type = "WorkingPaper",

}

TY - UNPB

T1 - In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

AU - Lipsanen, H.

AU - Sopanen, M.

AU - Taskinen, M.

AU - Tulkki, J.

AU - Ahopelto, J.

PY - 1996

Y1 - 1996

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

KW - optoelectronics

KW - semiconductors

M3 - Working paper

T3 - The Physics of Semiconductors. Proceedings of 23rd International Conference on the Physics of Semiconductors, Berlin, 1996

SP - 1111

EP - 1114

BT - In Situ Passivation of Near-Surface A1xGa1-xAs/GaAs Quantum Wells

CY - Berlin, Germany

ER -