In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

Outi Reentila, A. Lankinen, M. Mattila, A. Saynatjoki, T.O. Tuomi, H. Lipsanen, L. "O'Reilly", P.J. McNally

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)137-142
    Number of pages6
    JournalJournal of Materials Science: Materials in Electronics
    Issue number2
    Publication statusPublished - Feb 2008
    MoE publication typeA1 Journal article-refereed


    • dilute nitride
    • movpe
    • synchrotron topography

    Cite this