The growth of InGaAsN∕GaAs multiple quantum well structures by metal-organic vapor phase epitaxy is monitored by in situ reflectometry. The nitrogen incorporation is found to depend superlinearly on the precursor flow and a threshold value for the flow is observed. By in situ measurements of the InGaAsN quantum well samples with a fixed indium content, the change in the reflectance during the quantum well growth is found to be linearly dependent on the quantum well nitrogen content. A model to determine the nitrogen content already during the growth is developed. Moreover, the field of application of in situ reflectance monitoring is extended from thick layers to thin layers, including quantum wells.