In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

O. Reentilä; M. Mattila; Markku Sopanen; H. Lipsanen

doi:10.1063/1.2435065

In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

O. Reentilä, M. Mattila, Markku Sopanen, H. Lipsanen

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

236 Downloads (Pure)

Abstract

Metal-organic vapor phase epitaxial growth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.

Original language	English
Article number	033533
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Applied Physics
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.2435065
Publication status	Published - 2007
MoE publication type	A1 Journal article-refereed

Access to Document

10.1063/1.2435065

1.2435065Final published version, 274 KB

Cite this

@article{5bc9777efee54572830ee16d831e50d4,

title = "In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures",

abstract = "Metal-organic vapor phase epitaxial growth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.",

author = "O. Reentil{\"a} and M. Mattila and Markku Sopanen and H. Lipsanen",

year = "2007",

doi = "10.1063/1.2435065",

language = "English",

volume = "101",

pages = "1--5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

AU - Reentilä, O.

AU - Mattila, M.

AU - Sopanen, Markku

AU - Lipsanen, H.

PY - 2007

Y1 - 2007

N2 - Metal-organic vapor phase epitaxial growth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.

AB - Metal-organic vapor phase epitaxial growth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.

U2 - 10.1063/1.2435065

DO - 10.1063/1.2435065

M3 - Article

SN - 0021-8979

VL - 101

SP - 1

EP - 5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 033533

ER -

In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

Abstract

Access to Document

Fingerprint

Cite this