In-situ annealing characterization of atomic-layer-deposited Al2O3                                                  in N2                                                 , H2                                                  and vacuum atmospheres

Mikael Broas; Jori Lemettinen; Timo Sajavaara; Markku Tilli; Vesa Vuorinen; Sami Suihkonen; Mervi Paulasto-Kröckel

doi:10.1016/j.tsf.2019.03.010

In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres

Mikael Broas^*
, Jori Lemettinen
, Timo Sajavaara
, Markku Tilli
, Vesa Vuorinen
, Sami Suihkonen
, Mervi Paulasto-Kröckel

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

7 Citations (Scopus)

99 Downloads (Pure)

Abstract

Atomic-layer-deposited Al ₂ O ₃ films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al ₂ O ₃ is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N ₂ , H ₂ , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.

Original language	English
Pages (from-to)	147-155
Number of pages	9
Journal	Thin Solid Films
Volume	682
Early online date	1 Jan 2019
DOIs	https://doi.org/10.1016/j.tsf.2019.03.010
Publication status	Published - 31 Jul 2019
MoE publication type	A1 Journal article-refereed

Funding

The research was supported by ECSEL2014-2-662155 project: Informed, the Finnish Centre of Excellence in Nuclear and Accelerator Based Physics (Reference No. 251353 ) of the Academy of Finland, and the Academy of Finland Grant 297916 . The research was conducted in the facilities of OtaNano, Aalto University and the University of Jyväskylä. Al 2 O 3 deposition was carried out at Beneq Oy. Wafers were provided by Okmetic Oy.

Keywords

Aluminum oxide
Atomic layer deposition
Barrier film
Crystallization
High-temperature annealing

Access to Document

10.1016/j.tsf.2019.03.010

ELEC_Broas_MOVPE AL2O3 anneal TSF v3Accepted author manuscript, 4.09 MBLicence: CC BY-NC-ND

Cite this

Broas, M., Lemettinen, J., Sajavaara, T., Tilli, M., Vuorinen, V., Suihkonen, S., & Paulasto-Kröckel, M. (2019). In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres. Thin Solid Films, 682, 147-155. https://doi.org/10.1016/j.tsf.2019.03.010

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title = "In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres",

abstract = " Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks. ",

keywords = "Aluminum oxide, Atomic layer deposition, Barrier film, Crystallization, High-temperature annealing",

author = "Mikael Broas and Jori Lemettinen and Timo Sajavaara and Markku Tilli and Vesa Vuorinen and Sami Suihkonen and Mervi Paulasto-Kr{\"o}ckel",

note = "Tarkista embargo, kun artikkeli julkaistu.",

year = "2019",

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day = "31",

doi = "10.1016/j.tsf.2019.03.010",

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Broas, M, Lemettinen, J, Sajavaara, T, Tilli, M, Vuorinen, V, Suihkonen, S & Paulasto-Kröckel, M 2019, 'In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres', Thin Solid Films, vol. 682, pp. 147-155. https://doi.org/10.1016/j.tsf.2019.03.010

In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres. / Broas, Mikael; Lemettinen, Jori; Sajavaara, Timo et al.
In: Thin Solid Films, Vol. 682, 31.07.2019, p. 147-155.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

AU - Broas, Mikael

AU - Lemettinen, Jori

AU - Sajavaara, Timo

AU - Tilli, Markku

AU - Vuorinen, Vesa

AU - Suihkonen, Sami

AU - Paulasto-Kröckel, Mervi

N1 - Tarkista embargo, kun artikkeli julkaistu.

PY - 2019/7/31

Y1 - 2019/7/31

N2 - Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.

AB - Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex-situ x-ray diffraction, electron microscopy, and composition analysis were used to probe the structure of the crystallized films and explain the formation of different alumina phases. This study provides a set of boundary conditions, in terms of temperature and atmosphere, for crystallizing chemically stable atomic-layer-deposited alumina for applications requiring a film thickness in the range of tens of nanometers without defects such as cracks.

KW - Aluminum oxide

KW - Atomic layer deposition

KW - Barrier film

KW - Crystallization

KW - High-temperature annealing

UR - https://www.scopus.com/pages/publications/85065532680

U2 - 10.1016/j.tsf.2019.03.010

DO - 10.1016/j.tsf.2019.03.010

M3 - Article

AN - SCOPUS:85065532680

SN - 0040-6090

VL - 682

SP - 147

EP - 155

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Broas M, Lemettinen J, Sajavaara T, Tilli M, Vuorinen V, Suihkonen S et al. In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres. Thin Solid Films. 2019 Jul 31;682:147-155. Epub 2019 Jan 1. doi: 10.1016/j.tsf.2019.03.010

In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres

Abstract

Funding

Keywords

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DeFaMe: Defect related failure mechanisms in III-N devices

OtaNano

Cite this

In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2 , H2 and vacuum atmospheres

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Projects

DeFaMe: Defect related failure mechanisms in III-N devices

Equipment

OtaNano

Cite this

In-situ annealing characterization of atomic-layer-deposited Al₂O₃ in N₂ , H₂ and vacuum atmospheres