Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Hironori Okumura*, Yasuhiro Watanabe, Tomohiko Shibata, Kohei Yoshizawa, Akira Uedono, Hiroki Tokunaga, Shuuichi Koseki, Tadanobu Arimura, Sami Suihkonen, Tomás Palacios

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
34 Downloads (Pure)

Abstract

We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal Al-polar AlN layers grown on sapphire substrates. By annealing at 1600 °C, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300 °C, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

Original languageEnglish
Article number026501
Pages (from-to)1-7
Number of pages7
JournalJapanese Journal of Applied Physics
Volume61
Issue number2
DOIs
Publication statusPublished - Feb 2022
MoE publication typeA1 Journal article-refereed

Keywords

  • AlN
  • annealing
  • donor
  • electrical property
  • impurity diffusion
  • ion implantation
  • positron annihilation spectroscopy

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