Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • V. A. Shalygin
  • L. E. Vorobjev
  • D. A. Firsov
  • V. Yu Panevin
  • A. N. Sofronov
  • G. A. Melentyev
  • A. V. Antonov
  • V. I. Gavrilenko
  • A. V. Andrianov
  • A. O. Zakharyin
  • Sami Suihkonen

  • Pekka Törmä
  • M. Ali
  • Harri Lipsanen

Research units

  • St. Petersburg State Polytechnical University
  • RAS - Ioffe Physico Technical Institute
  • Russian Academy of Sciences

Abstract

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

Details

Original languageEnglish
Article number123523
Pages (from-to)1-5
Number of pages5
JournalJournal of Applied Physics
Volume106
Issue number12
Publication statusPublished - 2009
MoE publication typeA1 Journal article-refereed

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