Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakharyin, S. Suihkonen, Pekka Törmä, M. Ali, H. Lipsanen

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    Abstract

    We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

    Original languageEnglish
    Article number123523
    Pages (from-to)1-5
    Number of pages5
    JournalJournal of Applied Physics
    Volume106
    Issue number12
    DOIs
    Publication statusPublished - 2009
    MoE publication typeA1 Journal article-refereed

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