Improved silicon surface passivation with atomic layer deposited Al2O3 for photovoltaic applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientific

Researchers

Research units

Details

Original languageEnglish
Title of host publication25th Nordic Semiconductor Meeting, Espoo, Finland, June 9-12, 2013
Publication statusPublished - 2013
MoE publication typeB3 Non-refereed article in conference proceedings

ID: 599666