Improved RF Transistor Modelling by Statistical and Singularity Analysis

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo, Finland
Pages	20-21
Publication status	Published - 1995
MoE publication type	D4 Published development or research report or study

Name	The IRC Worshop'95, Espoo, Finland, May 1995

Cite this

@techreport{774675fd2d3146a2af811b66c3fab18c,

title = "Improved RF Transistor Modelling by Statistical and Singularity Analysis",

author = "V. Porra and J. Vidkjaer and J.Zheng Zhu and Timo Huttunen",

year = "1995",

language = "English",

series = "The IRC Worshop'95, Espoo, Finland, May 1995",

pages = "20--21",

type = "WorkingPaper",

}