Implementing ALD layers in MEMS processing

R. L. Puurunen, J. Saarilahti, H. Kattelus

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

67 Citations (Scopus)

Abstract

Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers for biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an ALD process can be successfully implemented in MEMS processing, several practical issues have to be solved, starting from patterning the layers and characterizing their behaviour in various chemical and thermal environments. Stress issues may not be forgotten We have recently implemented two ALD processes, namely the trimethy laluminium/water process to deposit Al2O3 and the titanium tetrachloride/water process to deposit TiO2 in our MEMS processing line and carried out the necessary characterization, details of which are reported here. For us, ALD has been a truly enabling technology in the processing of a three-dimensional micromechanical compass based on the Lorentz force, where Al2O3 acted as a pinhole-free electrical insulation grown at low temperature

Original languageEnglish
Title of host publicationECS Transactions - 3rd Symposium on Atomic Layer Deposition Applications
Pages3-14
Number of pages12
Volume11
Edition7
DOIs
Publication statusPublished - 2007
MoE publication typeA4 Article in a conference publication
EventSymposium on Atomic Layer Deposition Applications - Washington, United States
Duration: 8 Oct 20079 Oct 2007
Conference number: 3

Conference

ConferenceSymposium on Atomic Layer Deposition Applications
CountryUnited States
CityWashington
Period08/10/200709/10/2007

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