Implementation of high-k gate dielectrics - A status update

S. De Gendt, J. Chen, R. Carter, E. Cartier, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd, V. Kaushik, A. Kerber, S. Kubicek, J. W. Maes, M. Niwa, L. Pantisano, R. Puurunen, L. Ragnarsson, T. Schram, Y. Shimamoto, W. TsaiE. Rohr, S. Van Elshocht, T. Witters, E. Young, C. Zhao, M. Heyns

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

1 Citation (Scopus)

Abstract

The authors discuss Hf-Al mixed oxide characteristics, and applications to MOS capacitors and transistors. XRD an TEM analyses are performed and crystallisation behaviour analysed.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2003
PublisherIEEE
Pages10-14
Number of pages5
ISBN (Electronic)4891140372, 9784891140373
DOIs
Publication statusPublished - 2003
MoE publication typeA4 Article in a conference publication
EventInternational Workshop on Gate Insulator - Tokyo, Japan
Duration: 6 Nov 20037 Nov 2003

Conference

ConferenceInternational Workshop on Gate Insulator
Abbreviated titleIWGI
CountryJapan
CityTokyo
Period06/11/200307/11/2003

Keywords

  • Amorphous materials
  • Annealing
  • Artificial intelligence
  • Capacitance measurement
  • Crystallization
  • Dielectrics and electrical insulation
  • Electrodes
  • High K dielectric materials
  • High-K gate dielectrics
  • Temperature

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