Implantation Defects and n-type Doping in Ge and Ge rich SiGe

A.R. Peaker; V.P. Markevich; B. Hamilton; I.D. Hawkins; J. Slotte; K. Kuitunen; F. Tuomisto; A. Satta; E. Simoen; N. Abrosimov

doi:10.1016/j.tsf.2008.08.088

Implantation Defects and n-type Doping in Ge and Ge rich SiGe

A.R. Peaker, V.P. Markevich, B. Hamilton, I.D. Hawkins, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, E. Simoen, N. Abrosimov

Department of Applied Physics

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Original language	English
Pages (from-to)	152-154
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.088
Publication status	Published - 3 Nov 2008
MoE publication type	A1 Journal article-refereed

Keywords

Ge
SiGe
vacancy defects

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10.1016/j.tsf.2008.08.088

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@article{92668e8f29ee47b8ae0616874a5eef5d,

title = "Implantation Defects and n-type Doping in Ge and Ge rich SiGe",

keywords = "Ge, SiGe, vacancy defects, Ge, SiGe, vacancy defects, Ge, SiGe, vacancy defects",

author = "A.R. Peaker and V.P. Markevich and B. Hamilton and I.D. Hawkins and J. Slotte and K. Kuitunen and F. Tuomisto and A. Satta and E. Simoen and N. Abrosimov",

year = "2008",

month = nov,

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doi = "10.1016/j.tsf.2008.08.088",

language = "English",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Implantation Defects and n-type Doping in Ge and Ge rich SiGe

AU - Peaker, A.R.

AU - Markevich, V.P.

AU - Hamilton, B.

AU - Hawkins, I.D.

AU - Slotte, J.

AU - Kuitunen, K.

AU - Tuomisto, F.

AU - Satta, A.

AU - Simoen, E.

AU - Abrosimov, N.

PY - 2008/11/3

Y1 - 2008/11/3

KW - Ge

KW - SiGe

KW - vacancy defects

KW - Ge

KW - SiGe

KW - vacancy defects

KW - Ge

KW - SiGe

KW - vacancy defects

UR - https://www.scopus.com/pages/publications/54849418594

U2 - 10.1016/j.tsf.2008.08.088

DO - 10.1016/j.tsf.2008.08.088

M3 - Article

SN - 1879-2731

VL - 517

SP - 152

EP - 154

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Implantation Defects and n-type Doping in Ge and Ge rich SiGe

Keywords

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