Implantation Defects and n-type Doping in Ge and Ge rich SiGe

A.R. Peaker, V.P. Markevich, B. Hamilton, I.D. Hawkins, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, E. Simoen, N. Abrosimov

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)
Original languageEnglish
Pages (from-to)152-154
Number of pages3
JournalThin Solid Films
Volume517
Issue number1
DOIs
Publication statusPublished - 3 Nov 2008
MoE publication typeA1 Journal article-refereed

Keywords

  • Ge
  • SiGe
  • vacancy defects

Cite this

Peaker, A. R., Markevich, V. P., Hamilton, B., Hawkins, I. D., Slotte, J., Kuitunen, K., Tuomisto, F., Satta, A., Simoen, E., & Abrosimov, N. (2008). Implantation Defects and n-type Doping in Ge and Ge rich SiGe. Thin Solid Films, 517(1), 152-154. https://doi.org/10.1016/j.tsf.2008.08.088