Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

Cristina Medina-Bailon; Toufik Sadi; Mihail Nedjalkov; Jaehyun Lee; Salim Berrada; Hamilton Carrillo-Nunez; Vihar P. Georgiev; Siegfried Selberherr; Asen Asenov

doi:10.1109/SISPAD.2018.8551630

Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

Cristina Medina-Bailon, Toufik Sadi, Mihail Nedjalkov, Jaehyun Lee, Salim Berrada, Hamilton Carrillo-Nunez, Vihar P. Georgiev, Siegfried Selberherr, Asen Asenov

Department of Neuroscience and Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

4 Citations (Scopus)

Abstract

In the simulation based research of aggressively scaled CMOS transistors, it is mandatoryto combine advanced transport simulators and quantum confinement effects with atomistic simulations which accurately reproduce the electronic structure at the nanometer scale. This work investigates the impact of cross-section dependent effective masses, obtained from atomistic simulations, on the mobility in Si nanowire transistors (NWTs). For the transport simulations, weuse the Kubo-Greenwood formalism with a set of multisubband phonon, surface roughness, and impurity scattering mechanisms.

Original language	English
Title of host publication	SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
Publisher	IEEE
Pages	297-300
Number of pages	4
Volume	2018-September
ISBN (Electronic)	9781538667880
DOIs	https://doi.org/10.1109/SISPAD.2018.8551630
Publication status	Published - 28 Nov 2018
MoE publication type	A4 Article in a conference publication
Event	International Conference on Simulation of Semiconductor Processes and Devices - Austin, United States Duration: 24 Sep 2018 → 26 Sep 2018

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
Abbreviated title	SISPAD
Country/Territory	United States
City	Austin
Period	24/09/2018 → 26/09/2018

Keywords

Impurity Scattering
KuboGreenwood Formalism
Matthiessen rule
Nanowire FETs
Phonon Scattering
Surface Roughness Scattering
Transport Effective Mass

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10.1109/SISPAD.2018.8551630

http://eprints.gla.ac.uk/178379/

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Medina-Bailon, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carrillo-Nunez, H., Georgiev, V. P., Selberherr, S., & Asenov, A. (2018). Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. In SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings (Vol. 2018-September, pp. 297-300). [8551630] IEEE. https://doi.org/10.1109/SISPAD.2018.8551630

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abstract = "In the simulation based research of aggressively scaled CMOS transistors, it is mandatoryto combine advanced transport simulators and quantum confinement effects with atomistic simulations which accurately reproduce the electronic structure at the nanometer scale. This work investigates the impact of cross-section dependent effective masses, obtained from atomistic simulations, on the mobility in Si nanowire transistors (NWTs). For the transport simulations, weuse the Kubo-Greenwood formalism with a set of multisubband phonon, surface roughness, and impurity scattering mechanisms.",

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Medina-Bailon, C, Sadi, T, Nedjalkov, M, Lee, J, Berrada, S, Carrillo-Nunez, H, Georgiev, VP, Selberherr, S & Asenov, A 2018, Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. in SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings. vol. 2018-September, 8551630, IEEE, pp. 297-300, International Conference on Simulation of Semiconductor Processes and Devices, Austin, Texas, United States, 24/09/2018. https://doi.org/10.1109/SISPAD.2018.8551630

Impact of the Effective Mass on the Mobility in Si Nanowire Transistors. / Medina-Bailon, Cristina; Sadi, Toufik; Nedjalkov, Mihail et al.

SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings. Vol. 2018-September IEEE, 2018. p. 297-300 8551630.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

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Impact of the Effective Mass on the Mobility in Si Nanowire Transistors

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Keywords

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