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Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/Si1-xGex/SiO2/(100)Si structures with nm-thi

  • O. Madia
  • , A.P.D. Nguyen
  • , N.H. Thoan
  • , V. "Afanas'ev"
  • , A. Stesmans
  • , L. Souriau
  • , J. Slotte
  • , F. Tuomisto

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)
Original languageEnglish
Pages (from-to)11-15
Number of pages5
JournalApplied Surface Science
Volume291
DOIs
Publication statusPublished - 1 Feb 2014
MoE publication typeA1 Journal article-refereed

Keywords

  • charge
  • defect
  • positron

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