Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells

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Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells. / Modanese, C.; Wagner, Mt; Wolny, F.; Oehlke, A.; Laine, H. S.; Inglese, A.; Vahlman, H.; Yli-Koski, M.; Savin, H.

In: Solar Energy Materials and Solar Cells, Vol. 186, 01.11.2018, p. 373-377.

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Modanese, C. ; Wagner, Mt ; Wolny, F. ; Oehlke, A. ; Laine, H. S. ; Inglese, A. ; Vahlman, H. ; Yli-Koski, M. ; Savin, H. / Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells. In: Solar Energy Materials and Solar Cells. 2018 ; Vol. 186. pp. 373-377.

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@article{8c98fc471c6e4674b443709ffba6a52c,
title = "Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells",
abstract = "Both multicrystalline and Czochralski (Cz) silicon substrates are known to suffer from various mechanisms of light-induced degradation (LID), including copper-related LID (Cu-LID). Past studies on Cu-LID have mostly been performed on unprocessed wafers, omitting the impact of the solar cell process on the copper distribution. Here, we carefully contaminate Cz-substrates of different quality with different amounts of copper and process the substrates into complete industrial Cz-Si PERC solar cells, reaching a comprehensive mapping of the impact of Cu-LID for the PV industry. The results show that both the copper contamination level and Cz crystal quality are critical factors affecting the extent of Cu-LID. Most importantly, we show that copper can result in significant concentrations in the bulk of the finished PERC cells after being exposed to only trace surface contamination. Consequently, even a small local copper contamination area (~ 3–4 cm2) is sufficient to induce strong LID in the full-sized (156 × 156 mm2) cell parameters, resulting e.g. in ~7{\%} relative efficiency loss during light soaking. The corresponding short circuit current density decreases by up to a factor of two in the contaminated areas.",
keywords = "Cell efficiency, Copper, Czochralski silicon, LID imaging, Light-induced degradation, PERC",
author = "C. Modanese and Mt Wagner and F. Wolny and A. Oehlke and Laine, {H. S.} and A. Inglese and H. Vahlman and M. Yli-Koski and H. Savin",
note = "| openaire: EC/FP7/307315/EU//SOLARX",
year = "2018",
month = "11",
day = "1",
doi = "10.1016/j.solmat.2018.07.006",
language = "English",
volume = "186",
pages = "373--377",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier Science B.V.",

}

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TY - JOUR

T1 - Impact of copper on light-induced degradation in Czochralski silicon PERC solar cells

AU - Modanese, C.

AU - Wagner, Mt

AU - Wolny, F.

AU - Oehlke, A.

AU - Laine, H. S.

AU - Inglese, A.

AU - Vahlman, H.

AU - Yli-Koski, M.

AU - Savin, H.

N1 - | openaire: EC/FP7/307315/EU//SOLARX

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Both multicrystalline and Czochralski (Cz) silicon substrates are known to suffer from various mechanisms of light-induced degradation (LID), including copper-related LID (Cu-LID). Past studies on Cu-LID have mostly been performed on unprocessed wafers, omitting the impact of the solar cell process on the copper distribution. Here, we carefully contaminate Cz-substrates of different quality with different amounts of copper and process the substrates into complete industrial Cz-Si PERC solar cells, reaching a comprehensive mapping of the impact of Cu-LID for the PV industry. The results show that both the copper contamination level and Cz crystal quality are critical factors affecting the extent of Cu-LID. Most importantly, we show that copper can result in significant concentrations in the bulk of the finished PERC cells after being exposed to only trace surface contamination. Consequently, even a small local copper contamination area (~ 3–4 cm2) is sufficient to induce strong LID in the full-sized (156 × 156 mm2) cell parameters, resulting e.g. in ~7% relative efficiency loss during light soaking. The corresponding short circuit current density decreases by up to a factor of two in the contaminated areas.

AB - Both multicrystalline and Czochralski (Cz) silicon substrates are known to suffer from various mechanisms of light-induced degradation (LID), including copper-related LID (Cu-LID). Past studies on Cu-LID have mostly been performed on unprocessed wafers, omitting the impact of the solar cell process on the copper distribution. Here, we carefully contaminate Cz-substrates of different quality with different amounts of copper and process the substrates into complete industrial Cz-Si PERC solar cells, reaching a comprehensive mapping of the impact of Cu-LID for the PV industry. The results show that both the copper contamination level and Cz crystal quality are critical factors affecting the extent of Cu-LID. Most importantly, we show that copper can result in significant concentrations in the bulk of the finished PERC cells after being exposed to only trace surface contamination. Consequently, even a small local copper contamination area (~ 3–4 cm2) is sufficient to induce strong LID in the full-sized (156 × 156 mm2) cell parameters, resulting e.g. in ~7% relative efficiency loss during light soaking. The corresponding short circuit current density decreases by up to a factor of two in the contaminated areas.

KW - Cell efficiency

KW - Copper

KW - Czochralski silicon

KW - LID imaging

KW - Light-induced degradation

KW - PERC

UR - http://www.scopus.com/inward/record.url?scp=85049987763&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2018.07.006

DO - 10.1016/j.solmat.2018.07.006

M3 - Article

AN - SCOPUS:85049987763

VL - 186

SP - 373

EP - 377

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -

ID: 26865343