Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys

S. Schulz, M. A. Caro, E. P. O'Reilly

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

We demonstrate that cation-related localized states strongly perturb the band structure of Al1-xInxN leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in Al1-xInxN for low In composition, x, and that these localized states dominate the evolution of the band structure with increasing x. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in Al 1-xInxN.

Original languageEnglish
Article number172102
JournalApplied Physics Letters
Volume104
Issue number17
DOIs
Publication statusPublished - 28 Apr 2014
MoE publication typeA1 Journal article-refereed

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