Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths

Amit Khanna, Ananth Subramanian, Markus Häyrinen, Shankar Selvaraja, Peter Verheyen, Dries Van Thourhout, Seppo Honkanen, Harri Lipsanen, Roel Baets

Research output: Contribution to journalArticleScientificpeer-review

19 Citations (Scopus)
94 Downloads (Pure)
Original languageEnglish
Pages (from-to)5684-5692
Number of pages9
JournalOptics Express
Volume22
Issue number5
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Equipment

OtaNano

Anna Rissanen (Manager)

Aalto University

Facility/equipment: Facility

  • Cite this

    Khanna, A., Subramanian, A., Häyrinen, M., Selvaraja, S., Verheyen, P., Van Thourhout, D., ... Baets, R. (2014). Impact of ALD grown passivation layers on silicon nitride based integrated optical devices for very-near-infrared wavelengths. Optics Express, 22(5), 5684-5692. https://doi.org/10.1364/OE.22.005684