Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy

Aravind Vijayaraghavan*, Marina Y. Timmermans, Kestutis Grigoras, Albert G. Nasibulin, Esko I. Kauppinen, Ralph Krupke

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks.

Original languageEnglish
Article number265715
JournalNanotechnology
Volume22
Issue number26
DOIs
Publication statusPublished - 1 Jul 2011
MoE publication typeA1 Journal article-refereed

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