Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution

Research output: Contribution to journalArticleScientificpeer-review

Projects

  1. DeFaMe: Defect related failure mechanisms in III-N devices (DeFaMe)

    Suihkonen, S.

    01/09/201631/08/2021

    Project: Academy of Finland: Other research funding

ID: 26964029