Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution

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@article{0533e5efe61d462682fb2614d5555908,
title = "Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution",
abstract = "This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.",
keywords = "Confocal Raman spectroscopy, Three-dimensional (3-D) imaging, Stress distribution, Dislocation types, Bulk hexagonal GaN, Ammonothermal crystal growth",
author = "Joonas Holmi and Bairamov, {Bakhysh H.} and Sami Suihkonen and Harri Lipsanen",
year = "2018",
month = "7",
day = "25",
doi = "10.1016/j.jcrysgro.2018.07.024",
language = "English",
volume = "499",
pages = "47--54",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution

AU - Holmi, Joonas

AU - Bairamov, Bakhysh H.

AU - Suihkonen, Sami

AU - Lipsanen, Harri

PY - 2018/7/25

Y1 - 2018/7/25

N2 - This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.

AB - This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.

KW - Confocal Raman spectroscopy

KW - Three-dimensional (3-D) imaging

KW - Stress distribution

KW - Dislocation types

KW - Bulk hexagonal GaN

KW - Ammonothermal crystal growth

U2 - 10.1016/j.jcrysgro.2018.07.024

DO - 10.1016/j.jcrysgro.2018.07.024

M3 - Article

VL - 499

SP - 47

EP - 54

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 26964029